1. Light emitting diode a) emits light when forward biased b) Is made from semiconducting compound gallium arsenide c) is made of one of the two basic semi conducting material Si and Ge d) emits light when reverse biased 2. When a p-n junction is reverse biased a) The depletion layer widened compared to its normal unbaised thickness b) The current flowing in circuit is due to minority charge carrier c) The current inc. slightly with an increase in applied reverse bias voltage but shows a sudden sharp increase as the applied bias voltage reaches a particular value characteristic of diode d) The current is due to majority charge carriers and increase with applied bias voltage in a non-linear way.

 1. Light emitting diode 

a) emits light when forward biased

b) Is made from semiconducting compound gallium arsenide

c) is made of one of the two basic semi conducting material Si and Ge

d) emits light when reverse biased

 

2. When a p-n junction is reverse biased

a) The depletion layer widened compared to its normal unbaised thickness

b) The current flowing in circuit is due to minority charge carrier

c) The current inc. slightly with an increase in applied reverse bias voltage but shows a sudden sharp increase as the applied bias voltage reaches a particular value characteristic of diode

d) The current  is due to majority charge carriers and increase with applied bias voltage in a non-linear way.