the width of the forbidden gap in silicon crystal is 1.1 electron volt when the Crystal is converted into p type semiconductor then the distance of Fermi level from the valence band is

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Saurabh Koranglekar · Answer

Dear student The distance between them is reduced as compared to undoped silicon Distance calculation is doping concentration, temperature dependent Regards

Khimraj · Answer

The width of forbidden gap in silicon crystal is 1.1 eV. Then, in the crystal converted to n − type the distance of Fermi level from conduction band is 0.55 eV

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the width of the forbidden gap in silicon crystal is 1.1 electron volt when the Crystal is converted into p type semiconductor then the distance of Fermi level from the valence band is

the width of the forbidden gap in silicon crystal is 1.1 electron volt when the Crystal is converted into p type semiconductor then the distance of Fermi level from the valence band is

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the width of the forbidden gap in silicon crystal is 1.1 electron volt when the Crystal is converted into p type semiconductor then the distance of Fermi level from the valence band is

the width of the forbidden gap in silicon crystal is 1.1 electron volt when the Crystal is converted into p type semiconductor then the distance of Fermi level from the valence band is

2 Answers

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