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Application of a forward bias to a p-n junction (a) Widens the depletion zone. (b) Increases the potential difference across the depletion zone. (c) Increases the number of donors on the n side. (d) Increases the electric field in the depletion zone.



Application of a forward bias to a p-n junction


(a)    Widens the depletion zone.


(b)    Increases the potential difference across the depletion zone.


(c)    Increases the number of donors on the n side.


(d)    Increases the electric field in the depletion zone.


Grade:upto college level

1 Answers

Aditi Chauhan
askIITians Faculty 396 Points
7 years ago

(c)

Number of donors is more because electrons from -ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. Then eutralised pentavalent atom are again in position to donate electrons.

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