The width of forbidden gap in silicon crystal is converted in to a Ntype semiconductor the distance of fermi level from conduction band is

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Arun · Answer

Dear Aniket
The width of forbidden gap in silicon crystal is 1.1 eV. Then, in the crystal converted to n –type the distance of Fermi level from conduction band is 0.55 eV.
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Arun (askIITians forum expert)

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The width of forbidden gap in silicon crystal is converted in to a Ntype semiconductor the distance of fermi level from conduction band is

The width of forbidden gap in silicon crystal is converted in to a Ntype semiconductor the distance of fermi level from conduction band is

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The width of forbidden gap in silicon crystal is converted in to a Ntype semiconductor the distance of fermi level from conduction band is

The width of forbidden gap in silicon crystal is converted in to a Ntype semiconductor the distance of fermi level from conduction band is

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