Guest

~pure Si at 300 K has equal electron (n e ) and hole (n h ) concentration of 2x 10 16 per m 3 .doping by indium increases n h to 4 x 10 22 per m 3 .what will be n e (per m 3 ) in the doped silicon ?

~pure Si at 300 K has equal electron (ne) and hole (nh ) concentration of 2x 1016 per m3 .doping by indium increases nh to 4 x 1022 per m3 .what will be ne (per m3) in the doped silicon ?

Grade:12

0 Answers

No Answer Yet!

Answer The Question & Earn Cool Goodies See our forum point policy

ASK QUESTION

Get your questions answered by the expert for free