~pure Si at 300 K has equal electron (n e ) and hole (n h ) concentration of 2x 10 16 per m 3 .doping by indium increases n h to 4 x 10 22 per m 3 .what will be n e (per m 3 ) in the doped silicon ?

~pure Si at 300 K has equal electron (ne) and hole (nh ) concentration of 2x 1016 per m3 .doping by indium increases nh to 4 x 1022 per m3 .what will be ne (per m3) in the doped silicon ?


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