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mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. if for an n type semiconductor the density of electrons is 10 19 m -3 and their mobility is 1.6 m 2 /(V.s) then the resistivity of the semiconductoris close to? (ignore the contribution of holes) 2 ohm m 4ohm m 0.4 ohm m 0.2 ohm m plz explain also
For intrinsic semiconductors (no impurities), the number of electrons will be equal to the number of holes. So ne=nh=ni sigma =ni e (mu{e}+ mu{h} ) For N-type semiconductor electrons are majority carriers .Conductivity sigma = ne* muResistivity (rho) = {1}/sigma} = {1}/{ne*e*mu}= 0.4 Ohm m
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