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mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. if for an n type semiconductor the density of electrons is 10 19 m -3 and their mobility is 1.6 m 2 /(V.s) then the resistivity of the semiconductoris close to? (ignore the contribution of holes) 2 ohm m 4ohm m 0.4 ohm m 0.2 ohm m plz explain also

mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. if for an n type semiconductor the density of electrons is 1019 m-3 and their mobility is 1.6 m2/(V.s) then the resistivity of the semiconductoris close to? (ignore the contribution of holes)
  1. 2 ohm m
  2. 4ohm m
  3. 0.4 ohm m
  4. 0.2 ohm m
plz explain also

Grade:12th pass

2 Answers

Saurabh Koranglekar
askIITians Faculty 10341 Points
one year ago
576-367_IMG_20200502_111733.jpg
Vikas TU
14149 Points
one year ago
For intrinsic semiconductors (no impurities), the number of electrons will be equal to the number of holes. 
So  ne=nh=ni 
 sigma =ni e (mu{e}+ mu{h} )
 
For N-type semiconductor electrons are majority carriers .
Conductivity sigma =  ne* mu
Resistivity (rho) = {1}/sigma} = {1}/{ne*e*mu}

= 0.4 Ohm m

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