Guest

In an intrinsic semiconductor, the energy gap E g is 1.2eV. Its hole mobility is very much smaller than electron mobility and is independent of temp. What is the ratio b/w conductivity at 600K and that at 300K? Assume temp. dependence of intrinsic carrier conc. n i is expressed as n i =n o exp[-E g /2k b T] where n o is a constant and k b =8.62*10 -5 eVK -1 is Boltzmann constant.


In an intrinsic semiconductor, the energy gap Eg is 1.2eV. Its hole mobility is very much smaller than electron mobility and is independent of temp. What is the ratio b/w conductivity at 600K and that at 300K?

Assume temp. dependence of intrinsic carrier conc. ni is expressed as

ni=noexp[-Eg/2kbT]

where no is a constant and kb=8.62*10-5eVK-1 is Boltzmann constant.


Grade:9

0 Answers

No Answer Yet!

Answer The Question & Earn Cool Goodies See our forum point policy

ASK QUESTION

Get your questions answered by the expert for free