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In an intrinsic semiconductor, the energy gap E g is 1.2eV. Its hole mobility is very much smaller than electron mobility and is independent of temp. What is the ratio b/w conductivity at 600K and that at 300K? Assume temp. dependence of intrinsic carrier conc. n i is expressed as n i =n o exp[-E g /2k b T] where n o is a constant and k b =8.62*10 -5 eVK -1 is Boltzmann constant.


In an intrinsic semiconductor, the energy gap Eg is 1.2eV. Its hole mobility is very much smaller than electron mobility and is independent of temp. What is the ratio b/w conductivity at 600K and that at 300K?

Assume temp. dependence of intrinsic carrier conc. ni is expressed as

ni=noexp[-Eg/2kbT]

where no is a constant and kb=8.62*10-5eVK-1 is Boltzmann constant.


Grade:9

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