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When p-n junction diode is forward biased (A) the depletion region is reduced and barrier height is increased (B) the depletion region is widened and barrier height is reduced. (C) both the depletion region and barrier height reduced (D) both the depletion region and barrier height increased. ?

When p-n junction diode is forward biased (A) the depletion region is reduced and barrier height is increased (B) the depletion region is widened and barrier height is reduced. (C) both the depletion region and barrier height reduced (D) both the depletion region and barrier height increased. ?

Grade:12

2 Answers

Saurabh Koranglekar
askIITians Faculty 10341 Points
one year ago
In forward biasing, the p-type is connected with the positive terminal and the n-type is connected with negative terminal of the battery.Because of this, the holes in p-type region and the electrons in n-type region are pushed towards the junction which reduces the width of the depletion layer. Moreover the distance between the diffused holes and electrons decreases which results in decrease in electric field in depletion region. Hence the barrier potential decreases.
Vikas TU
14149 Points
one year ago
The width of the depletion layer in a p-n junction diode decreases in forward bias due to repulsion of carriers from battery terminals, holes from p-type and electrons from n-type. Now, due to small number of ions in depletion region its potential decreases.

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