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Grade 12Engineering Entrance Exams

When p-n junction diode is forward biased (A) the depletion region is reduced and barrier height is increased (B) the depletion region is widened and barrier height is reduced. (C) both the depletion region and barrier height reduced (D) both the depletion region and barrier height increased. ?

Profile image of sudhanshu
12 Years agoGrade 12
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2 Answers

Profile image of Saurabh Koranglekar
6 Years ago
In forward biasing, the p-type is connected with the positive terminal and the n-type is connected with negative terminal of the battery.Because of this, the holes in p-type region and the electrons in n-type region are pushed towards the junction which reduces the width of the depletion layer. Moreover the distance between the diffused holes and electrons decreases which results in decrease in electric field in depletion region. Hence the barrier potential decreases.
Profile image of Vikas TU
6 Years ago
The width of the depletion layer in a p-n junction diode decreases in forward bias due to repulsion of carriers from battery terminals, holes from p-type and electrons from n-type. Now, due to small number of ions in depletion region its potential decreases.

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