C and Si both have the same lattice structures having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because
(a) In the case of C the valence band is not completely filled at absolute zero temperature.
(b) In the case of C the conduction band is partly filled even at absolute zero temperature.
(c) The four bonding electrons in the case of C lie in the second orbit. Whereas in the case of Si they lie in the third.
(d) The four bonding electrons in the case of C lie in the third orbit. Whereas for Si they lie in the fourth orbit.
C and Si both have the same lattice structures having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because
(a) In the case of C the valence band is not completely filled at absolute zero temperature.
(b) In the case of C the conduction band is partly filled even at absolute zero temperature.
(c) The four bonding electrons in the case of C lie in the second orbit. Whereas in the case of Si they lie in the third.
(d) The four bonding electrons in the case of C lie in the third orbit. Whereas for Si they lie in the fourth orbit.
Harshit Singh , 3 Years ago
Grade 12th pass
