Click to Chat

1800-2000-838

+91-120-4616500

CART 0

• 0

MY CART (5)

Use Coupon: CART20 and get 20% off on all online Study Material

ITEM
DETAILS
MRP
DISCOUNT
FINAL PRICE
Total Price: R

There are no items in this cart.
Continue Shopping
        Suppose a pure Si crystal has 5 x 10^28 atoms/ cubic metre. It is doped by 1 ppm concentration of pentavalent As. caluculate the number of electrons and holes given that ni= 1.5 x 10 ^16 / cubic metre
6 years ago

SAGAR SINGH - IIT DELHI
879 Points
										Dear student,
The concentration of dopant introduced to an intrinsic semiconductor  determines its concentration and indirectly affects many of its  electrical properties. The most important factor that doping directly  affects is the material's carrier concentration. In an intrinsic  semiconductor under thermal equilibrium, the concentration of electrons  and holes is equivalent. That is,
$n = p = n_i.\$
If we have a non-intrinsic semiconductor in thermal equilibrium the relation becomes:
$n_0 \cdot p_0 = n_i^2\$
where n0 is the concentration of conducting electrons, p0 is the electron hole concentration, and ni is the material's intrinsic carrier concentration.

6 years ago
Think You Can Provide A Better Answer ?

## Other Related Questions on General Physics

View all Questions »
• Complete JEE Main/Advanced Course and Test Series
• OFFERED PRICE: R 15,000
• View Details
Get extra R 13,000 off
USE CODE: JEE1
• Kinematics & Rotational Motion
• OFFERED PRICE: R 600
• View Details